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Frequency characteristics of diodes with intervalley electron transfer that are based on variband In x(z)Ga1 − x(z)As with various cathode contacts

  • Physical Processes in Electron Devices
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Abstract

A two-level model of intervalley electron transfer in a variband semiconductor is used to study the operation of a Gunn diode based on variband In x(z)Ga1 − x(z)As with n +-n cathodes and n +-n −-n cathodes for different lengths of the active region and different thicknesses of the variband layer. It is demonstrated that the critical frequency of a GaAs-In0.4Ga0.6As diode (280–290 GHz) is higher than the critical generation frequencies of GaAs, In0.4Ga0.6As, and In0.2Ga0.8As diodes.

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Authors
  1. I. P. Storozhenko
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Original Russian Text © I.P. Storozhenko, 2007, published in Radiotekhnika i Elektronika, 2007, Vol. 52, No. 10, pp. 1253–1259.

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Storozhenko, I.P. Frequency characteristics of diodes with intervalley electron transfer that are based on variband In x(z)Ga1 − x(z)As with various cathode contacts. J. Commun. Technol. Electron. 52, 1158–1164 (2007). https://doi.org/10.1134/S1064226907100130

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  • DOI: https://doi.org/10.1134/S1064226907100130

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