Abstract
A microwave-band chaos generator based on a bipolar transistor is proposed. A mathematical model of this generator that comprises a self-oscillating system with 2.5 degrees of freedom is considered. The dynamics of the generator is analyzed via the Advanced Design System (ADS) with the parameters of a real transistor, and the generator is simulated with allowance for the properties of the substrate. The results of the ADS-based simulation are compared with experimental data. It is demonstrated that application of the ADS simulation package for the analysis of the generator with regard to the effect of the board topology and the characteristics of the prototype materials makes it possible to reach a qualitative agreement between the numerical and experimental results.
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Original Russian Text © A.S. Dmitriev, E.V. Efremova, N.A. Maksimov, E.V. Grigor’ev, 2007, published in Radiotekhnika i Elektronika, 2007, Vol. 52, No. 10, pp. 1232–1240.
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Dmitriev, A.S., Efremova, E.V., Maksimov, N.A. et al. Generator of microwave chaotic oscillations based on a self-oscillating system with 2.5 degrees of freedom. J. Commun. Technol. Electron. 52, 1137–1145 (2007). https://doi.org/10.1134/S1064226907100105
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DOI: https://doi.org/10.1134/S1064226907100105