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Profiling the boron distribution in asymmetric n +-p silicon photodiodes and a new concept for creating selectively sensitive photocells for megapixel color-image receivers

  • Physical Processes in Electron Devices
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Abstract

The spectral photosensitivity of n +-p silicon photodiodes with a p + layer implanted in the substrate is studied experimentally. It is demonstrated that such p + doping effectively shifts the long-wavelength edge of the photosensitivity in the optical spectral range and the shift depends on the depth of the p + layer. A new concept for creating selectively sensitive photocells for megapixel color-image receivers is proposed. The receivers are based on n +-p photodiode structures containing a few layers that are implanted at different depths and form desired color-separating potential barriers and lateral diffusion channels for collection of the minority carriers generated by photons of different colors.

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References

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Original Russian Text © I.V. Vanyushin, V.A. Gergel’, V.A. Zimoglyad, A.V. Lependin, Yu.I. Tishin, 2006, published in Radiotekhnika i Elektronika, 2006, Vol. 51, No. 12, pp. 1514–1519.

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Vanyushin, I.V., Gergel’, V.A., Zimoglyad, V.A. et al. Profiling the boron distribution in asymmetric n +-p silicon photodiodes and a new concept for creating selectively sensitive photocells for megapixel color-image receivers. J. Commun. Technol. Electron. 51, 1425–1430 (2006). https://doi.org/10.1134/S106422690612014X

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  • DOI: https://doi.org/10.1134/S106422690612014X

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