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Influence of the variband-layer thickness on the energy and frequency characteristics of In x(z)Ga1 − x(z)As Gunn diodes

  • Physical Processes in Electron Devices
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Abstract

The operation of variband-In x(z)Ga1 − x(z)As Gunn diodes with an active-region length of 2.5 µm and an n +-n cathode contact is studied by using a two-temperature model of electron intervalley transfer in a varib-and semiconductor. It is established that, in diodes, dipole domains or accumulation layers may be formed depending on the variband-layer thickness. The use of variband In x(z)Ga1 − x(z)As in the active region with an appropriate variband-layer thickness allows one to enhance the output power and the generation efficiency by a factor of approximately 1.5 and to increase the width of the frequency range of the diode operation approximately twofold as compared to that of an In0.2Ga0.8As-based diode.

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Authors
  1. Yu. V. Arkusha
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  2. E. D. Prokhorov
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  3. I. P. Storozhenko
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Additional information

Original Russian Text © Yu.V. Arkusha, E.D. Prokhorov, I.P. Storozhenko, 2006, published in Radiotekhnika i Elektronika, 2006, Vol. 51, No. 3, pp. 371–378.

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Arkusha, Y.V., Prokhorov, E.D. & Storozhenko, I.P. Influence of the variband-layer thickness on the energy and frequency characteristics of In x(z)Ga1 − x(z)As Gunn diodes. J. Commun. Technol. Electron. 51, 352–358 (2006). https://doi.org/10.1134/S1064226906030156

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  • DOI: https://doi.org/10.1134/S1064226906030156

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