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Designing elements of protection against electrostatic discharges for high-frequency CMOS circuits

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Abstract

A new electric circuit layout and physical structure are proposed for an element of protection against electrostatic discharges. The new element features a twofold smaller resistance to the electrostatic discharge current. The reduced resistance is obtained by using additional transistors implementing feedback. The use of the new electric circuit layout and a new simulation technique that takes into account substrate transistors allows reductions in the element’s area and its electric capacitance by factors of 1.5 and 1.6, respectively.

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References

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Authors
  1. V. A. Gergel’
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  2. N. M. Gorshkova
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  3. Ya. S. Gubin
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  4. O. A. Somov
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Additional information

Original Russian Text © V.A. Gergel’, N.M. Gorshkova, Ya.S. Gubin, O.A. Somov, 2006, published in Radiotekhnika i Elektronika, 2006, Vol. 51, No. 1, pp. 125–128.

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Gergel’, V.A., Gorshkova, N.M., Gubin, Y.S. et al. Designing elements of protection against electrostatic discharges for high-frequency CMOS circuits. J. Commun. Technol. Electron. 51, 118–121 (2006). https://doi.org/10.1134/S1064226906010165

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  • DOI: https://doi.org/10.1134/S1064226906010165

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