Abstract
The temperature characteristics of ring lasers with a diameter of 480 μm of an original design with an active region based on 10 layers of InAs/InGaAs/GaAs quantum dots are studied. The lasers demonstrated a low threshold current density (200 A/cm2 at 20°C), the characteristic temperature of the threshold current in the range of 20–100°C was 68 K, the maximum lasing temperature was as high as 130°C. These values are only slightly inferior to the parameters of the edge-emitting lasers fabricated from the same epitaxial wafer.
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Funding
M.V. Maximov, G.O. Kornyshov, and F.I. Zubov acknowledge support from the Ministry of Science and Higher Education of the Russian Federation (project no. 0791-2020-0002). Optical studies were performed as part of the Basic Research Program of the National Research University Higher School of Economics.
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Gordeev, N.Y., Moiseev, E.I., Fominykh, N.A. et al. Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers. Tech. Phys. Lett. 49 (Suppl 3), S196–S199 (2023). https://doi.org/10.1134/S1063785023900728
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DOI: https://doi.org/10.1134/S1063785023900728