Abstract
We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21, 0.30 and 0.93 eV.
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This study was carried out under state assignment of the Ministry of Science and Higher Education of the Russian Federation (project no. FSRM-2020-0004).
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Baranov, A.I., Uvarov, A.V., Maksimova, A.A. et al. Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy. Tech. Phys. Lett. 49 (Suppl 3), S163–S167 (2023). https://doi.org/10.1134/S1063785023900649
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DOI: https://doi.org/10.1134/S1063785023900649