Abstract
The results of a study by transmission electron microscopy of the structural state of α-Ga2O3 film with a thickness of about 1 micron, grown on the prismatic m-face sapphire by the method of chloride vapor phase epitaxy, are presented. The influence of the substrate orientation on the formation of the dislocation structure is discussed. Threading dislocations, including those with the Burgers vector 1/3(\(11\bar {2}0\)), and dislocation half-loops are revealed. The inclined propagation of dislocations and the of the threading dislocation density near the surface.
REFERENCES
Y. Yuan, W. Hao, W. Mu, Z. Wang, X. Chen, Q. Liu, G. Xu, C. Wang, H. Zhou, Y. Zou, X. Zhao, Z. Jia, J. Ye, J. Zhang, S. Long, X. Tao, R. Zhang, Y. Hao, Fundam. Res., 1 (6), 697 (2021). https://doi.org/10.1016/j.fmre.2021.11.002
Y. Tomm, P. Reiche, D. Klimm, T. Fukuda, J. Cryst. Growth, 220 (4), 510 (2000). https://doi.org/10.1016/S0022-0248(00)00851-4
T. Oshima, T. Nakazono, A. Mukai, A. Ohtomo, J. Cryst. Growth, 359 (1), 60 (2012). https://doi.org/10.1016/j.jcrysgro.2012.08.025
A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, M. P. Scheglov, M. A. Odnobludov, V. I. Nikolaev, Semiconductors, 53 (6), 780 (2019). .https://doi.org/10.1134/S1063782619060150
T. C. Ma, X. H. Chen, Y. Kuang, L. Li, J. Li, F. Kremer, F. F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. H. Tan, C. Jagadish, J. D. Ye, Appl. Phys. Lett., 115 (18), 182101 (2019). https://doi.org/10.1063/1.5120554
Y. Oshima, S. Yagyu, T. Shinohe, J. Cryst. Growth, 576, 126387 (2021). https://doi.org/10.1016/j.jcrysgro.2021.126387
K. Kaneko, H. Kawanowa, H. Ito, S. Fujita, Appl. Phys., 51 (2R), 020201 (2012). https://doi.org/10.1143/JJAP.51.020201
Y. Oshima, K. Kawara, T. Shinohe, T. Hitora, M. Kasu, S. Fujita, APL Mater., 7 (2), 022503 (2019). https://doi.org/10.1063/1.5051058
V. I. Nikolaev, A. I. Pechnikov, L. I. Guzilova, A. V. Chikiryaka, M. P. Shcheglov, V. V. Nikolaev, S. I. Stepanov, A. A. Vasil’ev, I. V. Shchemerov, A. Ya. Polyakov, Tech. Phys. Lett., 46 (3), 228 (2020). .https://doi.org/10.1134/S106378502003013X
R. Jinno, T. Uchida, K. Kaneko, S. Fujita, Appl. Phys. Express, 9 (7), 071101 (2016). https://doi.org/10.7567/APEX.9.071101
S. Shapenkov, O. Vyvenko, V. Nikolaev, S. Stepanov, A. Pechnikov, M. Scheglov, G. Varygin, Phys. Status Solidi B, 259 (2), 2100331 (2022). https://doi.org/10.1002/pssb.202100331
Y. Cheng, Y. Xu, Z. Li, J. Zhang, D. Chen, Q. Feng, S. Xu, H. Zhou, J. Zhang, Y. Hao, C. Zhang, J. Alloys Compd., 831, 154776 (2020). https://doi.org/10.1016/j.jallcom.2020.154776
K. Akaiwa, K. Ota, T. Sekiyama, T. Abe, T. Shinohe, K. Ichino, Phys. Status Solidi A, 217 (3), 1900632 (2020). https://doi.org/10.1002/pssa.201900632
Y. Oshima, E. G. Villora, K. Shimamura, Appl. Phys. Express, 8 (5), 055501 (2015). https://doi.org/10.7567/APEX.8.055501
J. D. Snow, A. H. Heuer, J. Am. Ceram. Soc., 56 (3), 153 (1973). https://doi.org/10.1111/j.1151-2916.1973.tb15432.x
P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, M. J. Whelan, Electron microscopy of thin crystals (Butterworths, London, 1965).
Funding
This study was supported financially by grant No. 19-29-12041 mk from the Russian Foundation for Basic Research.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors of this work declare that they have no conflict of interest.
Additional information
Publisher’s Note.
Pleiades Publishing remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Myasoedov, A.V., Pavlov, I.S., Pechnikov, A.I. et al. Defect Structure of α-Ga2O3 Film Grown on a m-face Sapphire Substrate, According to Transmission Electron Microscopy Investigation. Tech. Phys. Lett. 49 (Suppl 2), S90–S93 (2023). https://doi.org/10.1134/S1063785023900455
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785023900455