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Growth of β-Ga2O3 Single Crystals by the Solution–Melt Method

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Abstract

The modes of growth of Ga2O3 crystals from a solution of gallium oxide in a MoO3 melt in the process of MoO3 evaporation at a temperature of 1050°C have been studied. It is shown that at this temperature the Ga2O3 crystalline phase is in equilibrium with the MoO3 melt. As a result of the experiments, single crystals of β-Ga2O3 were obtained up to 1.5 mm in cross section. The composition and structure of the crystals were studied by X-ray diffraction and electron microscopy.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, Russia

    A. A. Kitsay, Yu. G. Nosov, A. V. Chikiryaka & V. I. Nikolaev

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  1. A. A. Kitsay
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  2. Yu. G. Nosov
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  3. A. V. Chikiryaka
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  4. V. I. Nikolaev
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Correspondence to A. V. Chikiryaka.

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Kitsay, A.A., Nosov, Y.G., Chikiryaka, A.V. et al. Growth of β-Ga2O3 Single Crystals by the Solution–Melt Method. Tech. Phys. Lett. 49 (Suppl 1), S38–S40 (2023). https://doi.org/10.1134/S1063785023900315

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