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The Effect of AlN Buffer Layer Morphology on the Structural Quality of a Semipolar GaN Layer Grown on a Si(001) Substrate, According to Transmission Electron Microscopy Data

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Abstract

Structural features of the interface between a semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si(001) template misoriented by an angle of 7° were studied by high-resolution transmission electron microscopy. The effect of interface morphology on the structural quality of the gallium nitride layer was revealed: faceted structure of the buffer layer surface reduces the threading dislocations density.

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ACKNOWLEDGMENTS

Investigations by transmission electron microscopy were performed at the equipment of Federal Common Use Center “Material science and diagnostics in advanced technologies” and NBICS center of NRC “Kurchatov Institute.”

The authors are grateful to V.N. Bessolov for providing the samples.

Funding

Investigation of AlN layers structural properties was supported by the Russian Fundamental Research Foundation (project no. 19-29-12041 mk).

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, Russia

    D. A. Kirilenko, A. V. Myasoedov, A. E. Kalmykov & L. M. Sorokin

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  1. D. A. Kirilenko
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  2. A. V. Myasoedov
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  3. A. E. Kalmykov
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  4. L. M. Sorokin
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Correspondence to A. E. Kalmykov.

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Kirilenko, D.A., Myasoedov, A.V., Kalmykov, A.E. et al. The Effect of AlN Buffer Layer Morphology on the Structural Quality of a Semipolar GaN Layer Grown on a Si(001) Substrate, According to Transmission Electron Microscopy Data. Tech. Phys. Lett. 49 (Suppl 1), S34–S37 (2023). https://doi.org/10.1134/S1063785023900303

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