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Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes

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Abstract

Switching of a high-voltage GaAs diode to the conducting state in the delayed impact-ionization mode is simulated and the results are compared with experimental data. It is shown that the effect of long-term (up to 100 ns) sustaining of the conducting state of the diode after switching is due to the appearance of narrow (of the order of a micrometer) ionizing Gunn domains, the so-called collapsing domains, in the electron-hole plasma. Impact ionization in collapsing domains and in the edge (cathode and anode) domains of a strong electric field (~300 kV/cm) maintains a high concentration of nonequilibrium carriers (≥1017 cm–3) during the entire duration of the applied reverse polarity voltage pulse.

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, Russia

    M. S. Ivanov, A. V. Rozhkov & P. B. Rodin

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  1. M. S. Ivanov
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  2. A. V. Rozhkov
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  3. P. B. Rodin
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Correspondence to M. S. Ivanov.

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Ivanov, M.S., Rozhkov, A.V. & Rodin, P.B. Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes. Tech. Phys. Lett. 49 (Suppl 1), S22–S25 (2023). https://doi.org/10.1134/S1063785023900273

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