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Microwave Schottky Diodes based on Single GaN Nanowires

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Abstract

A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter S21) of diode structures at various bias voltages, the parameters of the corresponding equivalent electrical circuit were determined. It is shown that the cutoff frequency of the fabricated diodes reaches 27.5 GHz.

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Funding

The synthesis of nanowires was supported by the Russian Science Foundation (grant 19-72-30 004). Post-growth treatment was carried out with the financial support of the Council for Grants of the President of the Russian Federation (SP-4018.2022.3, SP-2169.2021.1), as well as the Russian Foundation for Basic Research (scientific project 19-38-90 026). The frequency properties were studied within the scope of the Basic Research Program of National Research University of Higher School of Economics.

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Authors and Affiliations

  1. Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia

    K. Yu. Shugurov, G. A. Sapunov, V. V. Fedorov & I. S. Mukhin

  2. St. Petersburg State University, St. Petersburg, Russia

    A. M. Mozharov

  3. National Research University Higher School of Economics, St. Petersburg, Russia

    E. I. Moiseev

  4. Ioffe Institute, St. Petersburg, Russia

    S. A. Blokhin & A. G. Kuzmenkov

  5. Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia

    I. S. Mukhin

Authors
  1. K. Yu. Shugurov
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  2. A. M. Mozharov
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  3. G. A. Sapunov
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  4. V. V. Fedorov
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  5. E. I. Moiseev
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  6. S. A. Blokhin
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  7. A. G. Kuzmenkov
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  8. I. S. Mukhin
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Corresponding author

Correspondence to K. Yu. Shugurov.

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Shugurov, K.Y., Mozharov, A.M., Sapunov, G.A. et al. Microwave Schottky Diodes based on Single GaN Nanowires. Tech. Phys. Lett. 49 (Suppl 4), S346–S349 (2023). https://doi.org/10.1134/S1063785023010315

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