Abstract
We studied the influence of the focused ion beam milling of ridge waveguides on lasing parameters of edge-emitting lasers, based on a separate confinement double heterostructure. It is shown that there are three degrees of influence, according to the etching depth: modification of the waveguide properties only, a decrease in efficiency without changing the threshold current, and a simultaneous deterioration in the threshold current and efficiency with significant modification of the optical characteristics of the laser.
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Funding
The research was funded by the Ministry of High Education and Science of the Russian Federation under the project 0791-2020-0002, and by the Russian Foundation for Basic Research under projects 19-32-90219 and 18-502-12081. S. Breuer acknowledges the support from the German Research Foundation (DFG) (project N 389193326).
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Payusov, A.S., Mitrofanov, M.I., Kornyshov, G.O. et al. Focused Ion Beam Milling of Ridge Waveguides of Edge-Emitting Semiconductor Lasers. Tech. Phys. Lett. 49 (Suppl 3), S288–S291 (2023). https://doi.org/10.1134/S1063785023010285
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DOI: https://doi.org/10.1134/S1063785023010285