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Two-State Lasing in Injection Microdisks with InAs/InGaAs Quantum Dots

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Abstract

spectral dependencies of the electroluminescence intensity of a microdisk laser with a diameter of 31 μm with active region based on InAs/InGaAs quantum dots, operating in the continuous-wave regime, are investigated in a wide range of injection currents. Simultaneous lasing through the ground and excited states of quantum dots under intense excitation is demonstrated in injection microdisk laser for the first time. At low pumping powers lasing occurs via ground states of quantum dots only.

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Funding

Characteristics of the structures were studied in the framework of the NRU HSE Program of Fundamental Research. Fabrication of the structures was supported by the RF Ministry of Science and Higher Education (Project 0791-2020-0002).

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Authors and Affiliations

  1. National Research University Higher School of Economics, St. Petersburg, Russia

    I. S. Makhov, N. V. Kryzhanovskaya, A. M. Nadtochiy & A. E. Zhukov

  2. Ioffe Institute, St. Petersburg, Russia

    A. A. Beckman, M. M. Kulagina & Yu. A. Guseva

  3. Alferov Federal State Budgetary Institution of Higher Education and Science, Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia

    M. V. Maximov

Authors
  1. I. S. Makhov
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  2. A. A. Beckman
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  3. M. M. Kulagina
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  4. Yu. A. Guseva
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  5. N. V. Kryzhanovskaya
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  6. A. M. Nadtochiy
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  7. M. V. Maximov
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  8. A. E. Zhukov
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Correspondence to I. S. Makhov.

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Makhov, I.S., Beckman, A.A., Kulagina, M.M. et al. Two-State Lasing in Injection Microdisks with InAs/InGaAs Quantum Dots. Tech. Phys. Lett. 49 (Suppl 4), S330–S333 (2023). https://doi.org/10.1134/S1063785023010236

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  • DOI: https://doi.org/10.1134/S1063785023010236

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