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Charge Carrier Localization in InAs Self-Organized Quantum Dots

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Abstract

We considered the problem of localization of electrons and holes taking for instance the pyramidal InAs quantum dots in GaAs. The problem of quantum mechanics was solved for the localizing potential taking into account the geometry, chemical composition and built-in fields of the mechanical stress and strain. We found that the strongest localization of both types of charge carriers can be achieved if the ratio of the pyramid height to its base is about 0.2.

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ACKNOWLEDGMENTS

The authors are grateful to N.A. Cherkashin and A.V. Konovalov for useful discussions. The authors are also grateful to N.A. Bert, V.N. Nevedomskiy, A.L. Kolesnikova, A.E. Romanov, V.V. Preobrazhenskiy, B.R. Semyagin, and M.A. Putyato for many years of collaboration in the study of quantum dots.

Funding

The work was supported by the Russian Foundation for Basic Research (grant 19-32-90 116).

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Authors and Affiliations

  1. Ioffe Institute, St. Petersburg, Russia

    A. N. Kosarev & V. V. Chaldyshev

  2. Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia

    A. N. Kosarev

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  1. A. N. Kosarev
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  2. V. V. Chaldyshev
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Correspondence to A. N. Kosarev or V. V. Chaldyshev.

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Kosarev, A.N., Chaldyshev, V.V. Charge Carrier Localization in InAs Self-Organized Quantum Dots. Tech. Phys. Lett. 49 (Suppl 4), S323–S326 (2023). https://doi.org/10.1134/S1063785023010194

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