Abstract
A technique is proposed for the formation of epitaxial films of silicon carbide, gallium nitride and aluminum nitride on the surfaces of non-planar silicon parts. Using this technique, a GaN/AlN/SiC/Si heterostructure was grown on the surface of a silicon ring. The samples were studied by scanning electron microscopy, as well as by Raman and energy-dispersive spectroscopy. It is shown that the preliminary deposition of a SiC layer on silicon by the atom-substitution method in which (111) facets are inevitably being formed regardless of the local crystallographic orientation of the substrate surface makes it possible to efficiently grow on silicon parts subsequent layers of III-nitrides of both the wurtzite and sphalerite types.
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ACKNOWLEDGMENTS
The study was performed using the equipment of Unique Research Facility “Physics, Chemistry and Mechanics of Crystals and Thin Films” (IPME RAS, Saint-Petersburg).
Funding
A. S. Grashchenko, S. A. Kukushkin, and A. V. Redkov carried out their part of the study with support of the RF Ministry of Science and Higher Education in the framework of State Assignment for IPME RAS (Contract FFNF-2021-0001); the work of A. V. Osipov was supported by the RF Ministry of Science and Higher Education in the framework of State Assignment under Contract 94 033 852.
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Kondratenko, T.T., Grashchenko, A.S., Osipov, A.V. et al. Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications. Tech. Phys. Lett. 49 (Suppl 4), S319–S322 (2023). https://doi.org/10.1134/S1063785023010182
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DOI: https://doi.org/10.1134/S1063785023010182