Abstract
High-speed photodetectors based on InGaAs/GaAs quantum well–dot nanostructures have been investigated. A bandwidth of 8.2 GHz at a level of ‒3 dB and a wavelength of 905 nm has been demonstrated. It is shown that the speed of internal processes in quantum well–dots make it possible to create photodetectors with a bandwidth of up to 12.5 GHz and the processes of carrier thermalization from the quantum-well dot layers do not limit the speed under reverse biases of more than 5 V.
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ACKNOWLEDGMENTS
N.V. Kryzhanovskaya and A.E. Zhukov are grateful to the HSE Program for Fundamental Research. The authors thank N.N. Ledentsov for providing samples of vertically emitting lasers operating in the 905-nm spectral range. The scanning electron microscopy study was carried out at the Center for Collective Use “Materials Science and Diagnostics in Advanced Technologies” of the Ioffe Institute, Russian Academy of Sciences.
Funding
This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 0791-2020-0002.
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Translated by E. Bondareva
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Mintairov, S.A., Blokhin, S.A., Kalyuzhnyy, N.A. et al. High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots. Tech. Phys. Lett. 48, 161–164 (2022). https://doi.org/10.1134/S1063785022040186
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DOI: https://doi.org/10.1134/S1063785022040186