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GaN-on-Silicon Growth Features: Controlled Plastic Deformation

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Abstract

Gallium nitride heterostructures were grown on silicon substrates by metalorganic chemical vapor deposition. Plastic deformations of the substrate are observed that occurred during growth at temperatures of 930–975°C due to effective accumulation of compressive stress in the film. A method is proposed for controlled plastic deformation of silicon by high-temperature annealing with simultaneous in situ growth of a SiNx layer after the heterostructure is grown. This approach makes it possible to simplify the optimization of architecture of gallium nitride heterostructures for various technological task.

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Funding

This study was supported by National Research Center “Kurchatov Institute,” order no. 1055 of July 2, 2020.

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Authors and Affiliations

  1. National Research Center “Kurchatov Institute”, 123182, Moscow, Russia

    I. S. Ezubchenko, M. Ya. Chernykh, P. A. Perminov, J. V. Grishchenko, I. N. Trun’kin, I. A. Chernykh & M. L. Zanaveskin

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  1. I. S. Ezubchenko
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  2. M. Ya. Chernykh
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  3. P. A. Perminov
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  4. J. V. Grishchenko
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  5. I. N. Trun’kin
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  6. I. A. Chernykh
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  7. M. L. Zanaveskin
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Correspondence to I. S. Ezubchenko.

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The authors declare that they have no conflicts of interest.

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Translated by A. Sin’kov

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Ezubchenko, I.S., Chernykh, M.Y., Perminov, P.A. et al. GaN-on-Silicon Growth Features: Controlled Plastic Deformation. Tech. Phys. Lett. 47, 705–708 (2021). https://doi.org/10.1134/S1063785021070208

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  • DOI: https://doi.org/10.1134/S1063785021070208

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