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Ion Synthesis of Silicon-on-Insulator Structures with a Lead-Silicate Insulating Layer

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Abstract

Ion synthesis of silicon-on-insulator structures based on successive implantation of oxygen ions and a glass former into silicon substrates has been investigated. Lead ions are used as a glass-former. Specific features of formation of a buried silicate layer upon postimplantation annealing are considered. Current–voltage characteristics of the synthesized structures and resistivities of the insulator and the silicon device layer are measured.

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ACKNOWLEDGMENTS

This study was performed using analytical equipment of the “Diagnostics of Micro- and Nanostructures” Center for Collective Use.

Funding

This study was supported by the Ministry of Science and Higher Education of the Russian Federation within the framework of a state order to the Valiev Institute of Physics and Technology of the Russian Academy of Sciences, project no. 0066-2020-0003.

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Authors and Affiliations

  1. Valiev Institute of Physics and Technology (Yaroslavl Branch), Russian Academy of Sciences, 150007, Yaroslavl, Russia

    E. Yu. Buchin & Yu. I. Denisenko

Authors
  1. E. Yu. Buchin
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  2. Yu. I. Denisenko
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Correspondence to E. Yu. Buchin.

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The authors declare that they have no conflicts of interest.

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Translated by A. Sin’kov

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Buchin, E.Y., Denisenko, Y.I. Ion Synthesis of Silicon-on-Insulator Structures with a Lead-Silicate Insulating Layer. Tech. Phys. Lett. 47, 696–699 (2021). https://doi.org/10.1134/S106378502107018X

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  • DOI: https://doi.org/10.1134/S106378502107018X

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