Abstract
The possibility of using silicon with the nanoclusters of manganese atoms for creating photoresistors in the spectral region λ = 1.2–3 μm is shown. It is found that such photodetectors possess a threshold sensitivity of about 10–11 W at a wavelength of 1.55 μm. The quantum efficiency at a wavelength of 2 μm exceeds 10% and is 0.1% at a wavelength of 2.5 μm, which makes it possible to use the impurity photosensitivity of silicon with the nanoclusters of manganese atoms for creating high-resolution array photodetectors operating in the spectral region of up to 2.5 μm.
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Translated by E. Boltukhina
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Bakhadirkhanov, M.K., Ibodullaev, S.N., Zikrillaev, N.F. et al. An Infrared Radiation Photoresistor Based on Silicon with Nanoclusters of Manganese Atoms. Tech. Phys. Lett. 47, 641–644 (2021). https://doi.org/10.1134/S1063785021070038
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DOI: https://doi.org/10.1134/S1063785021070038