Abstract
The self-heating effect is simulated in a nanoscale junctionless fin field-effect transistor fabricated on the basis of silicon-on-insulator structures with a transistor base cross section of a rectangular, trapezoidal, or triangular shape. It is shown that, for the structures under consideration, the temperature in the middle of the transistor is lower than along its lateral edges near the source and drain.
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Atamuratov, A.E., Jabbarova, B.O., Khalilloev, M.M. et al. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes. Tech. Phys. Lett. 47, 542–545 (2021). https://doi.org/10.1134/S1063785021060055
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DOI: https://doi.org/10.1134/S1063785021060055