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Directional Radiation from GaAs quantum dots in AlGaAs nanowires

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Abstract

We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.

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Funding

The synthesis of nanostructures was supported by the Ministry of Science and Higher Education of the Russian Federation (state task no. 0791-2020-0003). The investigations of structure properties of experimental samples were supported by St. Petersburg State University, research grant no. 61520973. The investigations of optical properties of experimental samples were supported by the European Union’s Horizon 2020 Research and Innovation Program under Marie Skłodowska-Curie Grant agreement no. 722176 (INDEED). The silicon substrates were prepared under the support of the Russian Science Foundation, project no. 18-72-10047.

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Correspondence to R. R. Reznik.

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Translated by A. Nikol’skii

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Reznik, R.R., Morozov, K.M., Krestnikov, I.L. et al. Directional Radiation from GaAs quantum dots in AlGaAs nanowires. Tech. Phys. Lett. 47, 405–408 (2021). https://doi.org/10.1134/S106378502104026X

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