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Pulse Response Characteristics of Silicon Photovoltaic Converters Irradiated with Low-Energy Protons

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Abstract

The effect of irradiation with low-energy protons on the pulse characteristics of silicon photovoltaic structures is studied. Bipolar rectangular voltage pulses with constant amplitude of 10 mV and a frequency of 200 kHz and 1 MHz are used for measurements. It is shown that proton irradiation with an energy of 180 keV and a dose of 1015 cm–2 forms a region with a high concentration of radiation defects in the space charge region of the n+–p junction. Such elements can be used to create fast-response photodiodes with an operating modulation frequency of 18 MHz.

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ACKNOWLEDGMENTS

We thank Yu.A. Agafonov and V.I. Zinenko (Institute of Microelectronics Technology and High Purity Materials of the Russian Academy of Sciences) for irradiation of the samples.

Funding

This work was supported as a part of a state assignment for 2021 of the Federal Research Center of the Southern Scientific Center of the Russian Academy of Sciences, project no. 01201354240.

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Authors and Affiliations

  1. Kuban State University, 350040, Krasnodar, Russia

    N. M. Bogatov, L. R. Grigor’yan, A. I. Kovalenko & M. S. Kovalenko

  2. Federal Research Center, Southern Scientific Center of the Russian Academy of Sciences, 344006, Rostov-on-Don, Russia

    L. S. Lunin

Authors
  1. N. M. Bogatov
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  2. L. R. Grigor’yan
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  3. A. I. Kovalenko
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  4. M. S. Kovalenko
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  5. L. S. Lunin
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Corresponding author

Correspondence to N. M. Bogatov.

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The authors declare that they have no conflict of interest.

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Translated by I. Obrezanova

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Bogatov, N.M., Grigor’yan, L.R., Kovalenko, A.I. et al. Pulse Response Characteristics of Silicon Photovoltaic Converters Irradiated with Low-Energy Protons. Tech. Phys. Lett. 47, 326–328 (2021). https://doi.org/10.1134/S1063785021040040

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  • DOI: https://doi.org/10.1134/S1063785021040040

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