Skip to main content
SpringerLink
Log in

Simulation of the Response of a Low-Barrier Mott Diode to the Influence of Heavy Charged Particles from Outer Space

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Transient ionization processes occurring in a low-barrier GaAs Mott diode under the influence of heavy charged particles from outer space and laser pulses that imitate such particles are analyzed theoretically. The response of a diode to the influence of an As+ ion with an energy of 200 MeV, which corresponds to a linear energy transfer of 26 MeV cm2/mg, is compared with the response to the influence of optical radiation pulses of various durations (10–1000 fs) with a photon energy exceeding the band gap of GaAs.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.

Similar content being viewed by others

REFERENCES

  1. A. A. Gritsenko, REDS: Telekommun. Ustroistva Sist. 7 (1), 9 (2017).

    Google Scholar 

  2. A. I. Chumakov, A. A. Pechenkin, A. N. Egorov, O.  B.  Mavritskii, S. V. Baranov, A. L. Vasil’ev, and A. V. Yanenko, Russ. Microelectron. 37, 41 (2008). https://doi.org/10.1007/s11180-008-1005-2

    Article  Google Scholar 

  3. A. N. Egorov, V. A. Telets, A. I. Chumakov, O. B. Mavritskii, A. A. Pechenkin, A. V. Yanenko, and D. O. Kol’tsov, Elektronika 17 (5), 60 (2012).

    Google Scholar 

  4. V. I. Shashkin, A. V. Murel’, Yu. N. Drozdov, V. M. Danil’tsev, and O. I. Khrykin, Russ. Microelectron. 26, 49 (1997).

    Google Scholar 

  5. V. R. Zakamov and V. I. Shashkin, J. Commun. Technol. Electron. 56, 1013 (2011). https://doi.org/10.1134/S1064226911060234

    Article  Google Scholar 

  6. C. H. Petzl Lorenz, S. Hemour, and K. Wu, IEEE Trans. Microware Theory Technol. 64, 2146 (2016). https://doi.org/10.1109/TMTT.2016.2574848

    Article  ADS  Google Scholar 

  7. S. V. Obolensky, A. V. Murel, N. V. Vostokov, and V. I. Shashkin, IEEE Trans. Electron Dev. 58, 2507 (2011). https://doi.org/10.1109/TED.2011.2156410

    Article  ADS  Google Scholar 

  8. F. F. Komarov, Phys. Usp. 60, 435 (2017). https://doi.org/10.3367/UFNr.2016.10.038012

    Article  ADS  Google Scholar 

  9. N. V. Demarina and S. V. Obolensky, Tech. Phys. 47, 64 (2002). https://doi.org/10.1134/1.1435891

    Article  Google Scholar 

  10. A. S. Puzanov, S. V. Obolenskiy, and V. A. Kozlov, Semiconductors 52, 1407 (2018). https://doi.org/10.1134/S1063782618110209

    Article  ADS  Google Scholar 

  11. J. Pozela, Physics of High-Speed Transistors (Mokslas, Vil’nyus, 1989; Springer, New York, 1993), p. 57.

Download references

Funding

This study was performed within the framework of the base part of a state assignment, project no. 0729-2020-0057.

Author information

Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova & S. V. Obolenskii

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Afonino, Nizhny Novgorod oblast, Russia

    N. V. Vostokov

Authors
  1. A. S. Puzanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. V. Bibikova
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. I. Yu. Zabavichev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. E. S. Obolenskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. E. A. Tarasova
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. N. V. Vostokov
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. S. V. Obolenskii
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. V. Obolenskii.

Ethics declarations

The authors declare that they have no conflict of interest.

Additional information

Translated by O. Kadkin

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Puzanov, A.S., Bibikova, V.V., Zabavichev, I.Y. et al. Simulation of the Response of a Low-Barrier Mott Diode to the Influence of Heavy Charged Particles from Outer Space. Tech. Phys. Lett. 47, 305–308 (2021). https://doi.org/10.1134/S1063785021030287

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063785021030287

Keywords:

Search

Navigation