Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.
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This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024).
The authors declare that they have no conflict of interest.
Translated by E. Bondareva
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Sukhanov, M.A., Bakarov, A.K. & Zhuravlev, K.S. AlSb/InAs Heterostructures for Microwave Transistors. Tech. Phys. Lett. 47, 139–142 (2021). https://doi.org/10.1134/S1063785021020127
- AlSb/InAs heterostructures
- molecular beam epitaxy
- high electron mobility transistor.