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Express Characterization of the HgCdTe/CdHgTe Quantum Well Waveguide Heterostructures with the Quasi-Relativistic Carrier Dispersion Law by Room-Temperature Photoluminescence Spectroscopy

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Abstract

An express technique for characterizing narrow-gap waveguide heterostructures with the HgCdTe/CdHgTe quantum wells is proposed, which is based on an analysis of their room-temperature luminescence response. Advantages and constraints of this characterization technique are discussed in comparison with methods for more detailed diagnostics that entail photoluminescence and photoconductivity measurements in a wide temperature range.

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ACKNOWLEDGMENTS

This study was carried out on the equipment of the Femtospektr Unique Stand of the Center for Collective Use of the Institute for Physics of Microstructures, Russian Academy of Sciences.

Funding

This study was supported by the Ministry of Science and  Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024).

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Correspondence to S. V. Morozov.

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The authors declare that they have no conflict of interest.

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Translated by E. Bondareva

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Morozov, S.V., Utochkin, V.V., Rumyantsev, V.V. et al. Express Characterization of the HgCdTe/CdHgTe Quantum Well Waveguide Heterostructures with the Quasi-Relativistic Carrier Dispersion Law by Room-Temperature Photoluminescence Spectroscopy. Tech. Phys. Lett. 47, 154–157 (2021). https://doi.org/10.1134/S1063785021020115

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