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Plasmachemical and Wet Etching in the Postgrowth Technology of Solar Cells Based on the GaInP/GaInAs/Ge Heterostructure

Abstract—Studies have been carried out and a technology has been developed for the formation of a separating mesa structure in fabrication of multi-junction solar cells based on the GaInP/GaInAs/Ge heterostructure. Methods for etching of the heterostructure layers have been studied: wet chemical etching in compositions based on HBr, K2Cr2O7, and H2O and the plasmachemical etching in a flow of the BCl3 working gas. A comparative analysis of the etching methods was made. Protective masks based on a photoresist layer and TiOx/SiO2 were developed. Multi-junction solar cells with low leakage current (less than 10–7 A at a voltage of 0.5–1 V) were fabricated.

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Correspondence to A. V. Malevskaya.

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Translated by M. Tagirdzhanov

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Malevskaya, A.V., Zadiranov, Y.M., Malevskii, D.A. et al. Plasmachemical and Wet Etching in the Postgrowth Technology of Solar Cells Based on the GaInP/GaInAs/Ge Heterostructure. Tech. Phys. Lett. 47, 114–117 (2021).

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  • multi-junction solar cells
  • heterostructure
  • etching
  • mesa structure.