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The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

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Abstract

The dynamics of changes in the crystal structure and in the elemental and chemical composition of Si surface layers implanted with Na+, Rb+, and Cs+ ions in the process of stepwise annealing under different temperature conditions has been studied. It is shown that, on the surface implanted with Na+ ions, a NaSi2 film is formed after annealing it at a temperature of T = 900 K, a single-layer NaSi2 coating is formed at T = 1000 K and the surface and near-surface Si layers are completely cleansed of the atoms of the alloying element, oxygen, and carbon at T = 1100 K.

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Authors and Affiliations

  1. Tashkent State Technical University, 100097, Tashkent, Uzbekistan

    B. E. Umirzakov & G. Kh. Allaerova

  2. Institute of Ion Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, Uzbekistan

    Z. A. Isakhanov & R. M. Erkulov

Authors
  1. B. E. Umirzakov
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  2. Z. A. Isakhanov
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  3. G. Kh. Allaerova
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  4. R. M. Erkulov
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Correspondence to B. E. Umirzakov.

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Translated by O. Kadkin

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Umirzakov, B.E., Isakhanov, Z.A., Allaerova, G.K. et al. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions. Tech. Phys. Lett. 47, 11–15 (2021). https://doi.org/10.1134/S1063785021010120

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