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Smoothing the Surface of Gallium Antimonide

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Abstract

The results of studying the conditions for obtaining an atomically smooth surface of GaSb substrates are presented for the first time. It has been shown experimentally that it is possible to improve the surface quality of the samples by changing the annealing conditions. The smallest roughness of 1.3 nm was obtained for an annealing time of 16 min at a temperature of 650°C in a flow of trimethylantimony and H2.

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Funding

AFM studies were carried out using the equipment of the Materials Science and Diagnostics in Advanced Technologies Center for Collective Use of the Ioffe Physical Technical Institute and supported by the Ministry of Education and Science of Russia, unique project identifier RFMEFI62117X0018.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    R. V. Levin, I. V. Fedorov, A. S. Vlasov, P. N. Brunkov & B. V. Pushnyy

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  1. R. V. Levin
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  2. I. V. Fedorov
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  3. A. S. Vlasov
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  4. P. N. Brunkov
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  5. B. V. Pushnyy
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Correspondence to R. V. Levin.

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The authors declare that they have no conflict of interest.

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Translated by N. Petrov

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Levin, R.V., Fedorov, I.V., Vlasov, A.S. et al. Smoothing the Surface of Gallium Antimonide. Tech. Phys. Lett. 46, 1203–1205 (2020). https://doi.org/10.1134/S1063785020120123

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  • DOI: https://doi.org/10.1134/S1063785020120123

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