Abstract
A new method for epitaxial growth of cadmium sulfide (CdS) films in the metastable cubic phase by atomic-layer deposition on silicon substrates with a buffer layer of epitaxial silicon carbide has been developed. The growth of this CdS phase is provided by the low growth temperature (~180°C). The cubic phase was identified both by X-ray diffraction analysis and by spectral ellipsometry because the main peak of light absorption by CdS is split into two peaks, at 4.9 and 5.4 eV, in the hexagonal phase and is unsplit (degenerate) at 5.1 eV in the cubic phase.
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ACKNOWLEDGMENTS
This study was carried out on the equipment of the unique research installation Physics, Chemistry, and Mechanics of Crystals and Thin Films at the Federal State Unitary Enterprise Institute for Problems in Mechanics, Russian Academy of Sciences (St. Petersburg), and scientific park of the St. Petersburg State University (Innovation Technologies of Nanomaterials resource center and Nanotechnologies and X-ray Research Techniques interdisciplinary resource centers).
Funding
This study was supported the Russian Science Foundation, project no. 20-12-00193.
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Translated by M. Tagirdzhanov
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Kukushkin, S.A., Osipov, A.V., Romanychev, A.I. et al. Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates. Tech. Phys. Lett. 46, 1049–1052 (2020). https://doi.org/10.1134/S1063785020110085
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DOI: https://doi.org/10.1134/S1063785020110085