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Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy

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Abstract

We demonstrate the possibility of selective-area growth of ordered arrays of GaN nanowires by molecular beam epitaxy on SiOx/Si substrates patterned by photolithography with microspherical lenses without the preliminary formation of seed layers. The effect of the substrate temperature on the morphological properties of the obtained arrays of nanowitres is studied. The optimal growth parameters ensuring the selective-area growth of GaN nanowires are experimentally found.

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Funding

The work on growing the structures was supported by the Ministry of Science and Higher Education of the Russian Federation as part of state order no. 0791-2020-0003. Experimental samples were studied with the support of the Russian Foundation for Basic Research, project no. 18-02-40006 mega. The preparation of silicon substrates was supported by the Ministry of Science and Higher Education of the Russian Federation as part of state order no. 0791-2020-0005.

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Authors and Affiliations

  1. St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. O. Gridchin, K. P. Kotlyar, L. N. Dvoretskaya, I. S. Mukhin & G. E. Cirlin

  2. St. Petersburg University of Information Technologies, Mechanics, and Optics (ITMO University), 197101, St. Petersburg, Russia

    R. R. Reznik, I. S. Mukhin & G. E. Cirlin

  3. Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. V. Parfen’eva & G. E. Cirlin

  4. Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia

    G. E. Cirlin

  5. St. Petersburg State Electrotechnical University “LETI”, 197376, St. Petersburg, Russia

    G. E. Cirlin

Authors
  1. V. O. Gridchin
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  2. K. P. Kotlyar
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  3. R. R. Reznik
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  4. L. N. Dvoretskaya
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  5. A. V. Parfen’eva
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  6. I. S. Mukhin
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  7. G. E. Cirlin
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Corresponding author

Correspondence to V. O. Gridchin.

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The authors declare that they have no conflict of interest.

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Translated by O. Zhukova

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Gridchin, V.O., Kotlyar, K.P., Reznik, R.R. et al. Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy. Tech. Phys. Lett. 46, 1080–1083 (2020). https://doi.org/10.1134/S1063785020110061

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  • DOI: https://doi.org/10.1134/S1063785020110061

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