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The Influence of the Conditions of Getter Formation in High-Resistivity Silicon on the Characteristics of PIN Photodiodes

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Abstract

The influence of the conditions of gettering in high-resistivity silicon during fabrication of PIN photodiodes on reverse dark currents has been studied. It is shown that gettering using a combination of phosphorus ion implantation and deposition of a polysilicon film with subsequent doping of the substrate rear side with phosphorus at temperatures below 900°C leads to low values of the reverse dark current and increases the nonequilibrium carrier lifetime.

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REFERENCES

  1. H.-G. Moser, Progr. Part. Nucl. Phys. 63, 186 (2009). https://doi.org/10.1016/j.ppnp.2008.12.002

    Article  ADS  Google Scholar 

  2. S. C. Lee, H. B. Jeon, K. H. Kang, B. B. Kim, and H. Park, Nucl. Instrum. Methods Phys. Res., Sect. A 912, 350 (2018). https://doi.org/10.1016/j.nima.2017.12.043

    Article  Google Scholar 

  3. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 21.

    Google Scholar 

  4. A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A 70, 489 (2000).

    Article  ADS  Google Scholar 

  5. D. J. Han, G. Batignani, and A. del Guerra, Appl. Phys. Lett. 83, 1450 (2003). https://doi.org/10.1063/1.1602166

    Article  ADS  Google Scholar 

  6. S. Holland, Nucl. Instrum. Methods Phys. Res., Sect. A 275, 537 (1989). https://doi.org/10.1016/0168-9002(89)90741-9

    Article  Google Scholar 

  7. A. I. Kurnosov and V. V. Yudin, Production Technology of Semiconductor Devices and Integrated Circuits (Vyssh. Shkola, Moscow, 1986) [in Russian].

    Google Scholar 

  8. E. A. Klimanov, Usp. Prikl. Fiz. 3 (2), 121 (2015).

    Google Scholar 

  9. G. F. Dalla Betta, M. Boscardin, G. U. Pignatel, G. Verzellesi, L. Bosisio, L. Ferrario, M. Zen, and G. Soncini, Nucl. Instrum. Methods Phys. Res., Sect. A 409, 346 (1998). https://doi.org/10.1016/S0168-9002(97)01296-5

    Article  Google Scholar 

  10. J. Seo, J. Kim, H. Lim, and J. Park, J. Korean Phys. Soc. 57, 44 (2010). https://doi.org/10.3938/jkps.57.44

    Article  Google Scholar 

  11. V. M. Vladimirov, V. V. Markov, M. E. Sergii, and V. N. Shepov, Prib. Tekh. Eksp., No. 2, 166 (2011).

  12. A. Liu, D. Yan, J. Wong-Leung, L. Li, S. P. Phang, A. Cuevas, and D. Macdonald, in Proceedings of the 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (IEEE, 2018), p. 1667. https://doi.org/10.1109/PVSC.2018.8547431

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    I. B. Chistokhin & K. B. Fritzler

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  1. I. B. Chistokhin
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  2. K. B. Fritzler
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Correspondence to I. B. Chistokhin.

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Translated by A. Sin’kov

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Chistokhin, I.B., Fritzler, K.B. The Influence of the Conditions of Getter Formation in High-Resistivity Silicon on the Characteristics of PIN Photodiodes. Tech. Phys. Lett. 46, 1057–1059 (2020). https://doi.org/10.1134/S1063785020110048

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