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Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy

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Abstract

AlN/c-sapphire templates grown by plasma-activated molecular beam epitaxy have been studied using multicrystal X-ray diffractometry and a multi-beam optical stress meter system. Studies of the seed and buffer layers grown at different ratios of Al and N* growth flows and substrate temperatures have shown that templates with small tensile elastic stresses (<0.5 GPa) and densities of screw and edge grown-in dislocations 4 × 108 and 8 × 109 cm−2, respectively, can be produced.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. V. Ratnikov, D. V. Nechaev, A. V. Myasoedov, O. A. Koshelev & V. N. Zhmerik

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  1. V. V. Ratnikov
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  2. D. V. Nechaev
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  3. A. V. Myasoedov
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  4. O. A. Koshelev
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  5. V. N. Zhmerik
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Correspondence to V. V. Ratnikov.

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Translated by N. Petrov

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Ratnikov, V.V., Nechaev, D.V., Myasoedov, A.V. et al. Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy. Tech. Phys. Lett. 46, 389–392 (2020). https://doi.org/10.1134/S1063785020040240

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  • DOI: https://doi.org/10.1134/S1063785020040240

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