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Long-Range Magnetic Interaction in InGaAs/GaAs/δ-〈Mn〉 Heterostructures

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Abstract

Low-temperature circularly polarized electroluminescence in InGaAs/GaAs/δ-〈Mn〉 heterostructures has been studied. It is established that the degree of circular polarization weakly depends on spatial separation of the active region and magnetic layer and is retained even at a spacer layer thickness of 12 nm. The observed phenomenon is related to the long-range magnetic interaction of carriers and Mn ions.

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ACKNOWLEDGMENTS

We are grateful to B.N. Zvonkov (Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod) for his help in preparing structures for this investigation.

Funding

This work was supported by a grant from the President of the Russian Federation for Support of Young Doctors of Science, project no. MD-1708.2019.2.

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Authors and Affiliations

  1. Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    M. V. Dorokhin, P. B. Demina, E. I. Malysheva, A. V. Kudrin, M. V. Ved’ & A. V. Zdoroveyshchev

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  1. M. V. Dorokhin
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  2. P. B. Demina
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  3. E. I. Malysheva
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  4. A. V. Kudrin
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  5. M. V. Ved’
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  6. A. V. Zdoroveyshchev
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Correspondence to M. V. Dorokhin.

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The authors declare that they have no conflict of interest.

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Translated by P. Pozdeev

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Dorokhin, M.V., Demina, P.B., Malysheva, E.I. et al. Long-Range Magnetic Interaction in InGaAs/GaAs/δ-〈Mn〉 Heterostructures. Tech. Phys. Lett. 46, 87–90 (2020). https://doi.org/10.1134/S1063785020010204

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  • DOI: https://doi.org/10.1134/S1063785020010204

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