Abstract
We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/AlxGa1 –xAs (x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.
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This work was supported in part by the Russian Science Foundation, project no. 18-72-10047.
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Translated by P. Pozdeev
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Grigorieva, N.R., Shtrom, I.V., Grigoriev, R.V. et al. The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires. Tech. Phys. Lett. 45, 835–838 (2019). https://doi.org/10.1134/S1063785019080212
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DOI: https://doi.org/10.1134/S1063785019080212