Skip to main content
SpringerLink
Log in

Insulating GaN Epilayers Co-Doped with Iron and Carbon

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

The morphology and electrical properties of doped semi-insulating gallium nitride (GaN) epilayers have been studied. It was found that doping-induced improvement of the insulating properties of GaN epilayers with increased level of doping with carbon or iron is limited by the accompanying deterioration of surface morphology. The character of impurity-related morphology development is different for the two dopants. It is established that the co-doping with carbon and iron allows planarity of the GaN surface to be retained along with a significant improvement of insulating properties of epilayers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.

Similar content being viewed by others

REFERENCES

  1. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, London, 1970).

    Google Scholar 

  2. Ch. Song, X. Yang, P. Ji, J. Tang, A. Hu, Y. Feng, W. Lin, W. Ge, Zh. Yang, F. Xu, and B. Shen, Superlatt. Microstruct. 128, 199 (2019). https://doi.org/10.1016/j.spmi.2019.01.028

    Article  ADS  Google Scholar 

  3. N. G. Weimann, L. F. Eastman, Dh. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998).

    Article  ADS  Google Scholar 

  4. X. Li, O. Danielsson, H. Pedersen, E. Janzen, and U. Forsberg, J. Vac. Sci. Technol. B 33, 021208 (2015). https://doi.org/10.1116/1.4914316

    Article  Google Scholar 

  5. W. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. Yu. Kazantsev, B. Ya. Ber, M. A. Yagovkina, P. N. Brunkov, and A. F. Tsatsulnikov, J. Cryst. Growth 449, 108 (2016). https://doi.org/10.1016/j.jcrysgro.2016.06.002

    Article  ADS  Google Scholar 

  6. A. Lesnik, M. P. Hoffmann, A. Fariza, J. Blasing, H. Witte, P. Veit, F. Horich, Ch. Berger, J. Hennig, A. Dadgar, and A. Strittmatter, Phys. Status Solidi B 254, 1600708 (2017). https://doi.org/10.1002/pssb.201600708

    Article  ADS  Google Scholar 

  7. T. Tsuchiya, A. Terano, and K. Mochizuki, Jpn. J. Appl. Phys. 55 (5S), 05FE05 (2016). https://doi.org/10.7567/JJAP.55.05FE05

    Article  Google Scholar 

  8. M. Rudzinski, V. Desmaris, P. A. van Hal, J. L. Weyher, P. R. Hageman, K. Dynefors, T. C. Rodle, H. F. F. Jos, H. Zirath, and P. K. Larsen, Phys. Status Solidi C 3, 2231 (2006). https://doi.org/10.1002/pssc.200565379

    Article  ADS  Google Scholar 

  9. C. Lei, Y. Haibo, J. Lijuan, W. Quan, F. Chun, X. Hongling, W. Cuimei, G. Jiamin, Zh. Bo, Li Baiquan, W. Xiaoliang, and W. Zhanguo, J. Semicond. 36, 103002 (2015). https://doi.org/10.1088/1674-4926/36/10/103002

  10. V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, A. E. Nikolaev, P. N. Brunkov, M. A. Yagovkina, and A. F. Tsatsul’nikov, Tech. Phys. Lett. 44, 577 (2018). https://doi.org/10.21883/PJTF.2018.13.46327.17310

    Article  ADS  Google Scholar 

  11. W. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinitsyn, B. Ya. Ber, D. Yu. Kazantsev, and A. F. Tsatsulnikov, Tech. Phys. Lett. 42, 539 (2016).

    Article  ADS  Google Scholar 

  12. A. Fariza, A. Lesnik, S. Neugebauer, M. Wieneke, J. Hennig, J. Bläsing, H. Witte, A. Dadgar, and A. Strittmatter, J. Appl. Phys. 122, 025704 (2017). https://doi.org/10.1063/1.4993180

    Article  ADS  Google Scholar 

  13. W. V. Lundin, A. V. Sakharov, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, G. A. Mikhailovsky, P. N. Brunkov, V. V. Goncharov, B. Ya. Ber, D. Yu. Kazantsev, and A. F. Tsatsulnikov, Semiconductors 43, 963 (2009).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

We are grateful to P.B. Rodin for fruitful discussion of results. The AFM measurements were performed using instrumentation of the Federal Joint Research Center “Material Science and Characterization in Advanced Technologies.”

Author information

Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    W. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, E. Yu. Lundina & P. N. Brunkov

  2. Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. F. Tsatsulnikov

Authors
  1. W. V. Lundin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. V. Sakharov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. E. E. Zavarin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. D. A. Zakgeim
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. E. Yu. Lundina
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. P. N. Brunkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. A. F. Tsatsulnikov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to W. V. Lundin.

Ethics declarations

The authors declare that they have no conflict of interest.

Additional information

Translated by P. Pozdeev

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lundin, W.V., Sakharov, A.V., Zavarin, E.E. et al. Insulating GaN Epilayers Co-Doped with Iron and Carbon. Tech. Phys. Lett. 45, 723–726 (2019). https://doi.org/10.1134/S106378501907023X

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106378501907023X

Keywords:

Search

Navigation