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Diode Structures Based on (In, Fe)Sb/GaAs Magnetic Heterojunctions

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Abstract

The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/n-GaAs and (In, Fe)Sb/p-GaAs structures are analyzed. The band diagrams of heterojunctions are constructed. It is shown that the investigated structures have the same current transfer mechanism as in the structures with a Schottky barrier.

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ACKNOWLEDGMENTS

We are grateful to B.N. Zvonkov for growing the structures for our research.

Funding

This work was supported by the Ministry of Science and Higher Education of the Russian Federation (projects nos. 8.1751.2017/PCh and SP-2450.2018.5) in the part of electric transport measurements and the Russian Science Foundation (project no. 18-79-10088) in the part of growing samples and microscopic studies.

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Authors and Affiliations

  1. Nizhny Novgorod Research Physicotechnical Institute, Lobachevsky State University of Nizhny Novgorod, 603600, Nizhny Novgorod, Russia

    M. V. Ved’, M. V. Dorokhin, V. P. Lesnikov, D. A. Pavlov, Yu. V. Usov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveishchev & Yu. A. Danilov

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  1. M. V. Ved’
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  2. M. V. Dorokhin
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  3. V. P. Lesnikov
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  4. D. A. Pavlov
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  5. Yu. V. Usov
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  6. A. V. Kudrin
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  7. P. B. Demina
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  8. A. V. Zdoroveishchev
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  9. Yu. A. Danilov
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Corresponding author

Correspondence to M. V. Ved’.

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The authors declare that they have no conflict of interest.

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Translated by E. Chernokozhin

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Ved’, M.V., Dorokhin, M.V., Lesnikov, V.P. et al. Diode Structures Based on (In, Fe)Sb/GaAs Magnetic Heterojunctions. Tech. Phys. Lett. 45, 668–671 (2019). https://doi.org/10.1134/S1063785019070149

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  • DOI: https://doi.org/10.1134/S1063785019070149

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