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Ohmic Contacts to Europium Oxide for Spintronic Devices

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Abstract

A technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage curve and a contact resistance of 0.55 Ω mm and are stable in air. This suggests that the proposed technique holds promise for spintronic applications.

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Authors and Affiliations

  1. National Research Center Kurchatov Institute, 123182, Moscow, Russia

    A. A. Andreev, Yu. V. Grishchenko, I. A. Chernykh, M. L. Zanaveskin & E. F. Lobanovich

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  1. A. A. Andreev
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  2. Yu. V. Grishchenko
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  3. I. A. Chernykh
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  4. M. L. Zanaveskin
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  5. E. F. Lobanovich
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Correspondence to A. A. Andreev.

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Translated by D. Safin

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Andreev, A.A., Grishchenko, Y.V., Chernykh, I.A. et al. Ohmic Contacts to Europium Oxide for Spintronic Devices. Tech. Phys. Lett. 45, 345–347 (2019). https://doi.org/10.1134/S1063785019040047

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  • DOI: https://doi.org/10.1134/S1063785019040047

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