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Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor

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Abstract

Spin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the deposition of a CoPt contact provides an opportunity to enhance the circular polarization degree of diode emission. The observed increase in the polarization degree is attributed to the suppression of spin relaxation at the metal/semiconductor interface due to surface passivation and a reduction in the density of surface electron states as a result of processing in selenium vapor.

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REFERENCES

  1. M. Holub and P. Bhattacharya, J. Phys. D: Appl. Phys. 40, R179 (2007).

    Article  ADS  Google Scholar 

  2. N. Nishizawa, K. Nishibayashi, and H. Munekata, Appl. Phys. Lett. 104, 111102 (2014).

    Article  ADS  Google Scholar 

  3. S. Maekawa, Concepts in Spin Electronics (Oxford Univ. Press, New York, 2006).

    Book  MATH  Google Scholar 

  4. A. G. Aronov and G. E. Pikus, Sov. Phys. Semicond. 10, 698 (1976).

    Google Scholar 

  5. G. Salis, R. Wang, X. Jiang, R. M. Shelby, S. S. P. Parkin, S. R. Bank, and J. S. Harris, Appl. Phys. Lett. 87, 262503 (2005).

    Article  ADS  Google Scholar 

  6. E. H. Rhoderick, Metal–Semiconductor Contacts (Clarendon, Oxford, 1978).

    Google Scholar 

  7. E. A. Uskova, M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, E. I. Malysheva, E. A. Pitirimova, and F. Z. Gil’mutdinov, Poverkhnost’, No. 2, 89 (2006).

  8. P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffres, J. M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, et al., Appl. Phys. Lett. 105, 012404 (2014).

    Article  ADS  Google Scholar 

  9. S. Sato, R. Nakane, T. Hada, and M. Tanaka, Phys. Rev. B 96, 235204 (2017).

    Article  ADS  Google Scholar 

  10. A. V. Budanov, B. L. Agapov, Ya. A. Boldyreva, V. D. Strygin, and E. A. Tatokhin, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 6, 19 (2012).

    Article  Google Scholar 

  11. N. N. Bezryadin, G. I. Kotov, I. N. Arsentyev, Yu. N. Vlasov, and A. A. Starodubtsev, Semiconductors 46, 736 (2012).

    Article  ADS  Google Scholar 

  12. A. V. Zdoroveyshchev, M. V. Dorokhin, P. B. Demina, A. V. Kudrin, O. V. Vikhrova, M. V. Ved’, Yu. A. Danilov, I. V. Erofeeva, R. N. Krjukov, and D. E. Nikolichev, Semiconductors 49, 1601 (2015).

    Article  ADS  Google Scholar 

  13. A. I. Bobrov, Yu. A. Danilov, M. V. Dorokhin, A. V. Zdoroveyshchev, N. V. Malekhonova, E. I. Malysheva, D. A. Pavlov, and S. Saied, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 9, 706 (2015).

    Article  Google Scholar 

  14. M. A. Afifi, A. E. Bekheet, H. T. El-Shair, and I. T. Zedan, Phys. B (Amsterdam, Neth.) 325, 308 (2003).

  15. A. V. Kudrin, M. V. Dorokhin, A. V. Zdoroveishchev, P. B. Demina, O. V. Vikhrova, I. L. Kalent’eva, and M. V. Ved’, Phys. Solid State 59, 2223 (2017).

    Article  ADS  Google Scholar 

  16. G. Salis, R. Wang, X. Jiang, R. M. Shelby, S. S. P. Parkin, S. R. Bank, and J. S. Harris, Appl. Phys. Lett. 87, 262503 (2005).

    Article  ADS  Google Scholar 

  17. S. H. Liang, T. T. Zhang, P. Barate, J. Frougier, M. Vidal, P. Renucci, B. Xu, H. Jaffres, J.-M. George, X. Devaux, M. Hehn, X. Marie, S. Mangin, H. X. Yang, A. Hallal, M. Chshiev, T. Amand, H. F. Liu, D. P. Liu, X. F. Han, Z. G. Wang, and Y. Lu, Phys. Rev. B 90, 085310 (2014).

    Article  ADS  Google Scholar 

  18. M. V. Dorokhin, M. V. Ved’, P. B. Demina, A. V. Zdoroveyshchev, A. V. Kudrin, A. V. Rykov, and Yu. M. Kuznetsov, Phys. Solid State 59, 2155 (2017).

    Article  ADS  Google Scholar 

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Correspondence to M. V. Dorokhin.

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Translated by D. Safin

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Dorokhin, M.V., Demina, P.B., Budanov, A.V. et al. Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor. Tech. Phys. Lett. 45, 235–238 (2019). https://doi.org/10.1134/S1063785019030064

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  • DOI: https://doi.org/10.1134/S1063785019030064

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