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AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition

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Abstract

The pulsed laser deposition method has been used to fabricate AlInGaPAs/GaAs/Si nanoheterostructures for cascaded photoelectric converters operating at wavelengths in the range of 300–1300 nm. The structural and luminescent structures of AlInGaPAs nanofilms on GaAs and GaAs on Si were studied. The spectral characteristics of photocells in an AlInGaPAs/GaAs/Si triple-cascade photoelectric converter were examined.

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Authors and Affiliations

  1. Southern Scientific Center, Russian Academy of Sciences, Rostov-on-Don, 344006, Russia

    L. S. Lunin, M. L. Lunina, A. S. Pashchenko & D. L. Alfimova

  2. Platov South Russian Polytechnic University (NPI), Novocherkassk, Rostov oblast, 346428, Russia

    L. S. Lunin, A. E. Kazakova & D. A. Arustamyan

Authors
  1. L. S. Lunin
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  2. M. L. Lunina
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  3. A. E. Kazakova
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  4. A. S. Pashchenko
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  5. D. L. Alfimova
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  6. D. A. Arustamyan
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Correspondence to L. S. Lunin.

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Original Russian Text © L.S. Lunin, M.L. Lunina, A.E. Kazakova, A.S. Pashchenko, D.L. Alfimova, D.A. Arustamyan, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 24, pp. 75–80.

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Lunin, L.S., Lunina, M.L., Kazakova, A.E. et al. AlInGaPAs/GaAs/Si Heterostructures for Photoelectric Converters Fabricated by Pulsed Laser Deposition. Tech. Phys. Lett. 44, 1154–1156 (2018). https://doi.org/10.1134/S1063785018120519

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  • DOI: https://doi.org/10.1134/S1063785018120519

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