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Manufacture and Study of Switch p–n-Junctions for Cascade Photovoltaic Cells

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Abstract

Some results of studies on the creation of new junction elements for application in monolithic multijunction InP based photovoltaic cells are presented. A new type of junction elements with a specific ohmic resistance of less than 2 mΩ cm2 within a range of current densities of up to 700 A/cm2 is presented as an alternative to tunnel junctions.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    R. V. Levin, A. E. Marichev, E. V. Kontrosh, N. D. Prasolov, V. S. Kalinovskii & B. V. Pushnyi

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  1. R. V. Levin
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  2. A. E. Marichev
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  3. E. V. Kontrosh
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  4. N. D. Prasolov
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  5. V. S. Kalinovskii
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  6. B. V. Pushnyi
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Corresponding author

Correspondence to R. V. Levin.

Additional information

Original Russian Text © R.V. Levin, A.E. Marichev, E.V. Kontrosh, N.D. Prasolov, V.S. Kalinovskii, B.V. Pushnyi, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 24, pp. 25–31.

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Levin, R.V., Marichev, A.E., Kontrosh, E.V. et al. Manufacture and Study of Switch p–n-Junctions for Cascade Photovoltaic Cells. Tech. Phys. Lett. 44, 1130–1132 (2018). https://doi.org/10.1134/S1063785018120490

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  • DOI: https://doi.org/10.1134/S1063785018120490

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