Abstract
The quality of heteroboundaries and optimal conditions for epitaxial growth are critical parameters for obtaining low leakage currents of heterobarrier varactors in the InGaAs/InAlAs/AlAs material system. Grown by molecular-beam epitaxy, three-barrier heterobarrier varactor structures adjacent to InAlAs/AlAs/InAlAs barrier layers by additional mismatched InGaAs layers subjected to compressive stress show, under optimal epitaxy conditions, extremely low levels of leakage current density (not more than 0.06 A/cm2 at a voltage of 5 V and 85°C) with relatively thin AlAs inserts (with a thickness of 2 nm).
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Original Russian Text © N.A. Maleev, M.A. Bobrov, A.G. Kuzmenkov, A.P. Vasil’ev, M.M. Kulagina, S.N. Maleev, S.A. Blokhin, V.N. Nevedomsky, V.M. Ustinov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 19, pp. 16–23.
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Maleev, N.A., Bobrov, M.A., Kuzmenkov, A.G. et al. Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current. Tech. Phys. Lett. 44, 862–864 (2018). https://doi.org/10.1134/S1063785018100103
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DOI: https://doi.org/10.1134/S1063785018100103