Abstract
Reflectance spectroscopy has been used to determine the refractive indices of nanoscale InxAlyGa1–x–yAs and InxAl1–xAs layers with indium and aluminum concentrations x = 0.21–0.24 and y = 0, 0.1, and 0.2 on specially created Bragg-reflector heterostructures at wavelengths in the range 700–2000 nm. It was demonstrated that the method based on an analysis of the auto- and cross-correlation coefficients of the wavelength derivatives of the dependence of the reflectance of structures of this kind in order to determine the dispersion curves of the materials forming a reflector. It was found that raising the concentration of indium in InGaAs and AlInAs leads to a substantial rise in the refractive index, with a preserved spectral run of the refractive indices, which is characteristic of gallium arsenide and aluminum arsenide.
Similar content being viewed by others
References
D. V. Rybalchenko, S. A. Mintairov, R. A. Salii, N. Kh. Timoshina, M. Z. Shvarts, and N. A. Kalyuzhnyy, Semiconductors 51, 93 (2017).
S. A. Mintairov, V. M. Emel’yanov, D. V. Rybalchenko, R. A. Salii, N. Kh. Timoshina, M. Z. Shvarts, and N. A. Kalyuzhnyy, Semiconductors 50, 517 (2016).
N. A. Kalyuzhnyy, S. A. Mintairov, A. M. Nadtochiy, V. M. Nevedomskiy, D. V. Rybalchenko, and M. Z. Shvarts, Electron. Lett. 53, 173 (2017).
M. Dumke, G. Heiserich, S. Franke, L. Schulz, and L. Overmeyer, J. Syst., Cybernet. Inform. 8, 55 (2010).
V. M. Lantratov, I. V. Kochnev, and M. Z. Shvarts, in Proceedings of the 27th State of the Art Program on Compound Semiconductors Conference SOTAPOCS (Electrochem. Soc., 1997), Vol. 97–21, p. 125.
M. Z. Shvarts, O. I. Chosta, I. V. Kochnev, V. M. Lantratov, and V. M. Andreev, Sol. Energy Mater. Sol. Cells 68 (1), 105 (2001).
V. M. Emelyanov, N. A. Kalyuzhniy, S. A. Mintairov, M. Z. Shvarts, and V. M. Lantratov, Semiconductors 44, 1600 (2010).
F. Abeles, Ann. Phys. 5, 596 (1950).
S. Adachi, J. Appl. Phys. 66, 6030 (1989).
D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, J. Appl. Phys. 60, 754 (1986).
A. N. Pikhtin and A. D. Yas’kov, Sov. Phys. Semicond. 14, 229 (1980).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.M. Emel’yanov, N.A. Kalyuzhnyy, S.A. Mintairov, M.Z. Shvarts, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 19, pp. 50–58.
Rights and permissions
About this article
Cite this article
Emel’yanov, V.M., Kalyuzhnyy, N.A., Mintairov, S.A. et al. Optical Properties of InGaAs/InAlAs Metamorphic Nanoheterostructures for Photovoltaic Converters of Laser and Solar Radiation. Tech. Phys. Lett. 44, 877–880 (2018). https://doi.org/10.1134/S1063785018100061
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785018100061