Abstract
A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 μm. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 μm amounted to 250 kW/cm2.
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Original Russian Text © V.Ya. Aleshkin, N.V. Baidus, O.V. Vikhrova, A.A. Dubinov, B.N. Zvonkov, Z.F. Krasilnik, K.E. Kudryavtsev, S.M. Nekorkin, A.V. Novikov, A.V. Rykov, I.V. Samartsev, D.V. Yurasov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 16, pp. 67–74.
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Aleshkin, V.Y., Baidus, N.V., Vikhrova, O.V. et al. Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate. Tech. Phys. Lett. 44, 735–738 (2018). https://doi.org/10.1134/S1063785018080175
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DOI: https://doi.org/10.1134/S1063785018080175