Abstract
Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+–π–ν–n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the use of a commercial software that the electron injection affects the avalanche breakdown voltage and the spacecharge region broadens due to capture of avalanche holes on negative iron ions in the π-region. It is demonstrated by comparing the results of numerical calculation with the experimental data that the S-shaped I–V characteristic of the diffusion avalanche S-diodes cannot be explained within the previously proposed mechanism of capture of avalanche holes on the deep iron levels.
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Original Russian Text © I.A. Prudaev, M.G. Verkholetov, A.D. Koroleva, O.P. Tolbanov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 11, pp. 21–29.
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Prudaev, I.A., Verkholetov, M.G., Koroleva, A.D. et al. Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs. Tech. Phys. Lett. 44, 465–468 (2018). https://doi.org/10.1134/S106378501806007X
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DOI: https://doi.org/10.1134/S106378501806007X