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Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping

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Abstract

The influence of the concentration of silicon donors on the electron-transport properties of pseudomorphous Al0.25Ga0.75As/In0.2Ga0.8As/GaAs quantum wells (QWs) in heterostructures with heavy unilateral δ-doping by Si atoms was studied in a broad temperature interval (2.1–300 K). High electron mobility (up to 35700 cm2/(V s)) at T = 4.2 K was observed at a 2D (sheet) electron density of 2 × 1012 cm–2 in the QW. A band mechanism limiting the ionization of donors at an increased level of doping is described. The nonmonotonic variation of electron mobility with increasing silicon concentration is explained. A growth in the mobility is related to increase in the Fermi momentum and screening, while the subsequent decay is caused by tunneling-induced degradation of the spacer layer with decreasing potential of the conduction band in the region of δ-Si layer. It is shown that the effect is not related to filling of the upper subband of dimensional quantization.

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Correspondence to D. A. Safonov.

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Original Russian Text © D.A. Safonov, A.N. Vinichenko, N.I. Kargin, I.S. Vasil’evskii, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 4, pp. 34–41.

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Safonov, D.A., Vinichenko, A.N., Kargin, N.I. et al. Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping. Tech. Phys. Lett. 44, 145–148 (2018). https://doi.org/10.1134/S106378501802027X

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  • DOI: https://doi.org/10.1134/S106378501802027X

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