The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
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We have studied the influence of metamorphic-buffer layer design on the temporal (storage) stability of electrical characteristics of InGaAs/GaAs metamorphic high-electron-mobility transistors (MHEMTs). Using measurements of the Hall effect, it is established that transistor heterostructures with a metamorphic buffer based on In(Al)GaAs/InAlAs superlattices possess maximum values of the concentration and mobility of electrons in the MHEMT channel and show minimum susceptibility to temporal degradation.
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- 7.R. K. Jones, P. Hebert, P. Pien, R. R. King, D. Bhusari, R. Brandt, O. Al Taher, C. Fetzer, J. Ermer, A. Boca, D. Larrabee, X. Q. Liu, and N. Karam, in Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, HI, USA, June 20–25, 2010, p. 000189.Google Scholar