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Technical Physics Letters

, Volume 43, Issue 9, pp 863–865 | Cite as

The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT

  • E. V. Nikitina
  • A. A. Lazarenko
  • E. V. Pirogov
  • M. S. Sobolev
  • T. N. Berezovskaya
Article
  • 31 Downloads

Abstract

We have studied the influence of metamorphic-buffer layer design on the temporal (storage) stability of electrical characteristics of InGaAs/GaAs metamorphic high-electron-mobility transistors (MHEMTs). Using measurements of the Hall effect, it is established that transistor heterostructures with a metamorphic buffer based on In(Al)GaAs/InAlAs superlattices possess maximum values of the concentration and mobility of electrons in the MHEMT channel and show minimum susceptibility to temporal degradation.

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • E. V. Nikitina
    • 1
    • 2
  • A. A. Lazarenko
    • 1
  • E. V. Pirogov
    • 1
  • M. S. Sobolev
    • 1
  • T. N. Berezovskaya
    • 1
  1. 1.St. Petersburg Academic University, Russian Academy of SciencesSt. PetersburgRussia
  2. 2.Nanotechnology Research and Education CenterRussian Academy of SciencesSt. PetersburgRussia

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