Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium
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We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons approached 6000 cm2/(V · s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at Т = 300 К in the absence of intercalated hydrogen.
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