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Technical Physics Letters

, Volume 43, Issue 9, pp 787–789 | Cite as

Highly efficient X-range AlGaN/GaN power amplifier

  • P. A. Tural’chuk
  • V. V. Kirillov
  • P. E. Osipov
  • I. B. Vendik
  • O. G. Vendik
  • M. D. Parnes
Article
  • 23 Downloads

Abstract

The development of microwave power amplifiers (PAs) based on transistors with an AlGaN/GaN heterojunction are discussed in terms of the possible enhancement of their efficiency. The main focus is on the synthesis of the transforming circuits, which ensure the reactive load at the second- and third-harmonic frequencies and complex impedance at the fundamental frequency. This makes it possible to optimize the complex operation mode of a PA; i.e., to reduce the scattering power and enhance the efficiency. A microwave PA based on the Schottky-barrier-gate field-effect transistor with 80 electrodes based on the GaN pHEMT transistor with a gate length of 0.25 nm and a gate width of 125 nm is experimentally investigated. The amplifier has a pulse output power of 35 W and a power-added efficiency of at least 50% at a working frequency of 9 GHz.

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • P. A. Tural’chuk
    • 1
  • V. V. Kirillov
    • 1
  • P. E. Osipov
    • 2
  • I. B. Vendik
    • 1
  • O. G. Vendik
    • 1
  • M. D. Parnes
    • 2
  1. 1.St. Petersburg State Electrotechnical University (LETI)St. PetersburgRussia
  2. 2.OOO RezonansSt. PetersburgRussia

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