Technical Physics Letters

, Volume 43, Issue 9, pp 811–813 | Cite as

Directional emission from beryllium doped GaAs/AlGaAs nanowires

  • V. G. Talalaev
  • I. V. Shtrom
  • Yu. B. Samsonenko
  • A. I. Khrebtov
  • A. D. Bouravleuv
  • G. E. Cirlin
Article
  • 26 Downloads

Abstract

The emission directionality of self-catalytic GaAs nanowires in an AlGaAs shell, produced by molecular-beam epitaxy with a varied level of beryllium doping, is studied. It is shown that an undoped sample possesses pronounced waveguide properties along the growth direction. With increasing doping level, the intensity of the emission directed perpendicular to the lateral nanowire walls grows.

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • V. G. Talalaev
    • 1
    • 2
  • I. V. Shtrom
    • 2
    • 3
    • 4
    • 5
  • Yu. B. Samsonenko
    • 3
    • 5
  • A. I. Khrebtov
    • 3
  • A. D. Bouravleuv
    • 2
    • 3
    • 4
    • 5
  • G. E. Cirlin
    • 3
    • 5
    • 6
    • 7
  1. 1.Martin Luther UniversityHalle–Wittenberg, HalleGermany
  2. 2.St. Petersburg State UniversitySt. PetersburgRussia
  3. 3.St. Petersburg Academic University, Russian Academy of SciencesSt. PetersburgRussia
  4. 4.Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  5. 5.Institute of Analytical InstrumentationRussian Academy of SciencesSt. PetersburgRussia
  6. 6.St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)St. PetersburgRussia
  7. 7.Peter the Great St. Petersburg Polytechnic UniversitySt. PetersburgRussia

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